to-92l plastic-encapsulate transistors 2SC2655 transistor (npn) features z low s aturation v oltage: v ce(sat) =0.5v(max)(i c =1a) z high s peed s witching t ime: t stg =1 s(typ.) z complementary to 2sa1020 maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max u nit collector-base breakdown voltage v (br)cbo i c =100 a,i e =0 50 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =100 a,i c =0 5 v collector cut-off current i cbo v cb =50v,i e =0 1 a emitter cut-off current i ebo v eb =5v,i c =0 1 a h fe(1) v ce =2v,i c =500ma 70 240 dc current gain h fe(2) v ce =2v,i c =1.5a 40 collector-emitter saturation voltage v ce(sat) i c =1a,i b =0.05a 0.5 v base-emitter saturation voltage v be(sat) i c =1a,i b =0.05a 1.2 v transition frequency f t v ce =2v,i c =0.5a 100 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 30 pf tune on time t on 0.15 storage time t stg 2 switch time fall time t f v cc =30v,ic=1a, i b1 =-i b2 =0.05a 0.15 s classification of h fe (1) rank o y range 70-140 120-240 symbol parameter symbol unit v cbo collector-base voltage 50 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current ?continuous 2 a p c collector power dissipation 0.9 w t j junction temperature 150 t stg storage temperature -55-150 to-92l 1.emitter 2.collector 3.base 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,nov,2012
0.01 0.1 1 0 100 200 300 400 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 0 25 50 75 100 125 150 0 200 400 600 800 1000 0.01 0.1 1 0.0 0.1 0.2 0.3 0.4 0.01 0.1 1 0.0 0.4 0.8 1.2 0246810 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 1 10 100 1000 common emitter v ce =2v 2 i c t a =25 t a =100 dc current gain h fe collector current i c (a) 2SC2655 v be i c ?? common emitter v ce =2v 2 t a =100 t a =25 collector current i c (a) base-emmiter voltage v be (v) pc ?? ta collector power dissipation pc (mw) ambient temperature ta ( ) 2 =20 t a =100 t a =25 i c v cesat ?? collector-emitter saturation voltage v cesat (v) collector current i c (a) h fe ?? 2 =20 i c v besat ?? t a =100 t a =25 base-emitter saturation voltage v besat (v) collector current i c (a) static characteristic 5ma 4.5ma 4ma 3.5ma 3ma 2.5ma 2ma 1.5ma 1ma i b =0.5ma common emitter t a =25 collector current i c (a) collector-emitter voltage v ce (v) f=1mhz i e =0/ i c =0 t a =25 20 v cb / v eb c ob / c ib ?? c ob c ib capacitance c (pf) reverse voltage v (v) 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,nov,2012
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